Non-isolated, low-side drivers Single-channel and dual-channel low-side gate driver ICs to control MOSFETs and IGBTs
EiceDRIVER™ low-side gate driver ICs utilize low-voltage circuitry with the robust technology of high-voltage gate drivers and the state-of-the-art 0.13 µm process. Our world-class fabrication techniques enable high-current gate drivers for high-power-density applications in industry-standard DSO-8 and small form-factor SOT23 and WSON packages.
Our low-side gate driver ICs portfolio
Infineon offers single-low-side and dual-low-side gate driver ICs with flexible options for output current, logic configurations, packages, and protection features such as under-voltage lockout (UVLO), integrated overcurrent protection (OCP), and truly differential inputs (TDI).
Low-side gate driver IC with integrated overcurrent protection
The EiceDRIVER™ 1ED4417x family - equipped with over-current protection (OCP) which is typically implemented by a current measurement with a comparator, multiple resistors and capacitors. The gate drivers provide cost and space savings by integrating the comparator. This family of low-side gate drivers utilize Infineon’s proprietary latch immune CMOS technologies to enable a rugged monolithic construction while realizing best-in-class fault reporting accuracy with OCP threshold tolerance of +/-5%. In addition, Infineon’s IC technology enables a tiny PG-SOT23 package (or DSO-8 for 1ED44176) by combining the fault output and enable functions into a single pin.
Learn more about 25 V low-side gate drivers with protection features
Gate drivers with Truly Differential Inputs: 1EDN TDI
The input signal levels of conventional non-isolated gate-driver ICs are referenced to the ground potential of the gate-driver IC. If in the application the ground potential of the gate-driver IC shifts excessively, false triggering of the gate-driver IC can occur. Overcome ground-shift challenges in your design with Infineon’s single-channel non-isolated EiceDRIVER™ gate-driver ICs, which have truly differential inputs.
Find detailed information:
![1ED4417x Family](/export/sites/default/media/eLearning/Industrial/gate_drivers/1ED4417x-family/1ED4417x-family.jpg_1778949874.jpg)
In this training, we will focus on our low-side gate driver family – 1ED4417x and on its target applications. With this information, you will be able to grow your businesses by winning new designs and customers.
![Infineon´s training – How to drive a high-speed power MOSFET](/export/sites/default/_images/product/power/eLearning/PSS_eLearning_How_to_drive_highspeed_MOSFETs_english.png_1787261563.png)
In this training, we will help you increase efficiency by exploring in detail how to drive a high-speed power MOSFET.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
![](/export/sites/default/media/eLearning/Industrial/gate_drivers/Gate-drive-design-cookbook-for-driving-MOSFETs/GD_cookbook.png_1782643958.png)
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.